A physical model is proposed based on the two recombination mechanisms, the former mechanism may be related to the capture of conduction band electrons by deep electron traps, and the later is due to the recombination of electrons with holes trapped in hole traps. 基于这些现象,提出了一个可能的物理模型,认为第一种机制是由于导带电子被电子陷阱俘获而引起的,第二种是由于导带电子与空穴陷阱俘获的空穴之间的复合而造成的。